MMBTH24 |
RFQ for MMBTH24 |
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| Technical/Catalog Information | MMBTH24 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Frequency - Transition | 400MHz |
| Noise Figure (dB Typ @ f) | - |
| Current - Collector (Ic) (Max) | 50mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 8mA, 10V |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| Gain | - |
| Power - Max | 225mW |
| Compression Point (P1dB) | - |
| Package / Case | SOT-23 |
| Packaging | Tape & Reel (TR) |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MMBTH24 MMBTH24 MMBTH24FS ND MMBTH24FSND MMBTH24FS |
| Product | Manufacturers | Pack | D/C |
| MMBTH24 | - | SOT23 | - |
This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 A to 20 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers. Sourced from Process 47. See MPSH11 for characteristics.
|
Symbol |
Parameter |
Value |
Units |
|
VCEO |
CollectorEmitter Voltage |
30 |
V |
|
VCEO |
CollectorBase Voltage |
40 |
V |
|
VCEO |
EmitterBase Voltage |
4.0 |
V |
|
IC |
Collector current - Continuous |
50 |
mA |
|
TJ, Tstg |
Operating and Storage Junction Temperature Range |
-55 ~ +150 |
|